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2SK3236
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
2SK3236
Switching Regulator Applications, DC-DC Converter and Motor Drive Applications
* * * * * 4-V gate drive Low drain-source ON resistance: RDS (ON) = 13.5 m (typ.) High forward transfer admittance: |Yfs| = 42 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 60 V) Enhancement model: Vth = 1.3~2.5 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 60 60 20 35 105 30 68 35 3.0 150 -55~150 Unit V V V A W mJ A mJ C C
Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
SC-67 2-10R1B
Weight: 1.9 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 4.16 62.5 Unit C/W C/W
Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: VDD = 50 V, Tch = 25C, L = 40 H, RG = 25 , IAR = 35 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution.
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2SK3236
Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) Yfs Ciss Crss Coss tr ID = 18 A VOUT RL = 1.67 VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 60 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 4 V, ID = 18 A VGS = 10 V, ID = 18 A VDS = 10 V, ID = 18 A Min 60 1.3 21 Typ. 22 13.5 42 2300 220 370 9 Max 10 100 2.5 36 20 pF Unit A A V V m S
10 V VGS 0V 4.7

ns

Turn-ON time Switching time Fall time
ton
23
tf
VDD 30 V - Duty < 1%, tw = 10 s =
20

nC
Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge
toff Qg Qgs Qgd
100 52 37 15
VDD 48 V, VGS = 10 V, ID = 35 A -

Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 35 A, VGS = 0 V IDR = 35 A, VGS = 0 V, dIDR/dt = 50 A/s Min Typ. 60 81 Max 35 105 -1.7 Unit A A V ns nC
Marking
K3236
Part No. (or abbreviation code) Lot No.
A line indicates lead (Pb)-free package or lead (Pb)-free finish.
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2SK3236
ID - VDS
20 10 8 5 4 3.75 3.5 80 100 10 8 6 5
ID - VDS
Common source Tc = 25C Pulse test 4.5
16
Drain current ID (A)
Drain current ID (A)
12
60 4 40
8
3.25
4
VGS = 3 V Common source, Tc = 25C Pulse test 0.2 0.4 0.6 0.8 1
20
3.5 VGS = 3 V
0 0
0 0
2
4
6
8
10
Drain-source voltage
VDS (V)
Drain-source voltage
VDS (V)
ID - VGS
100 25 80 Tc = -55C 1
VDS - VGS
Common source Tc = 25C Pulse test
VDS (V) Drain-source voltage
100
0.8
Drain current ID (A)
60
0.6 ID = 35 A
40
0.4
20 0.2 10 0 0
20 Common source VDS = 10 V Pulse test 0 0 2 4 6 8 10
4
8
12
16
20
Gate-source voltage
VGS
(V)
Gate-source voltage
VGS (V)
Yfs - ID
100 0.1
RDS (ON) - ID
(S)
Forward transfer admittance Yfs
Tc = -55C
Drain-source on resistance RDS (ON) ()
100 10
25
4 VGS = 10 V 0.01
Common source VDS = 10 V Pulse test 1 1 10 100
Common source Tc = 25C Pulse test 0.001 1 10 100
Drain current
ID
(A)
Drain current
ID
(A)
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2SK3236
RDS (ON) - Tc
0.1 Common source 0.08 Pulse test 100
IDR - VDS
(A)
Drain-source on resistance RDS (ON) ()
10 5 3 10 1
0.06
0.04 VGS = 4 V 0.02 VGS = 10 V 0 -80 -40 0 40 80 120
20 10 35 20 10 160
Drain reverse current IDR
VGS = 0 V Common source Tc = 25C Pulse test 1 0.0 -0.4 -0.8 -1.2 -1.6 -2.0
Case temperature Tc
(C)
Drain-source voltage
VDS (V)
Capacitance - VDS
100000 Common source VGS = 0 V f = 1 MHz Tc = 25C 10000 3
Vth - Tc
Vth (V) Gate threshold voltage
Ciss Coss Crss 1 10 100
2.5
(pF)
2
Capacitance C
1.5
1000
1 Common source VDS = 10 V 0.5 I = 1 mA D Pulse test 0 -80 -40 0 40 80 120 160
100 0.1
Drain-source voltage
VDS (V)
Case temperature Tc
(C)
PD - Tc
50 80
Dynamic input/output characteristics
Common source ID = 35 A Tc = 25C Pulse test VDS 12 24 20
Drain power dissipation PD (W)
VDS (V)
40
60
15
Drain-source voltage
40 VDD = 48 V
10
20
10
20 VGS
5
0 0
40
80
120
160
0 0
20
40
60
0 80
Case temperature Tc
(C)
Total gate charge Qg (nC)
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Gate-source voltage
30
VGS (V)
2SK3236
rth - tw
10
Normalized transient thermal impedance rth (t)/Rth (ch-c)
1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 10 Single pulse 100 1m 10 m 100 m PDM t T Duty = t/T Rth (ch-c) = 4.16C/W 1 10
Pulse width
tw
(S)
Safe operating area
1000 80
EAS - Tch
Avalanche energy EAS (mJ)
ID max (pulse) * 100 ID max (continuous) 1 ms *
60
Drain current ID
(A)
100 s *
40
10
20
DC operation Tc = 25C 1 * Single nonrepetitive pulse Tc = 25C Curves must be derated linearly with increase in temperature. 0.1 0.1 VDSS max
0 25
50
75
100
125
150
Channel temperature (initial) Tch (C)
15 V
1 10 100
BVDSS IAR VDD VDS
Drain-source voltage
VDS (V)
0V
Test circuit RG = 25 VDD = 50 V, L = 40 H
Wave form
AS =
1 B VDSS L I2 B 2 VDSS - VDD
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RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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